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| MUBW 10-12A6 Converter - Brake - Inverter Module (CBI1) Rectifier VRRM = 1600V IFAVM = 11 A IFSM = 250 A Brake VCES = 1200 V IC25 = 3.6 A VCE(sat) = 2.8 V Inverter VCES = 1200 V IC25 = 13 A VCE(sat) = 2.8 V Features q Input Rectifier Bridge D8 - D13 Symbol VRRM IF IFAVM IFSM it TVJ TVJ = 25C TVJ = 150C; TK = 70C TVJ = 45C; t = 10 ms sine 50 Hz TVJ = 125C Conditions Maximum Ratings 1600 36 11 250 310 +150 V A A A As C q q q q q NPT IGBT technology Square RBSOA, no latchup Free wheeling diodes with Hiperfast and soft recovery behaviour Isolation voltage 2500 V~ Built in temperature sense High level of integration: one module for complete drive system Direct Copper Bonded Al2O3 ceramic base plate Applications Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 10 3 1.15 1.4 1.4 A mA V C/W q q AC motor control AC servo and robot drives q IR VF RthJC VRRM = 1200 V; TVJ = 25C TVJ = 125C IF = 36 A per die Advantages q q q No need of external isolation Easy to mount with two screws Package designed for wave soldering High temperature and power cycling capability (c) 2000 IXYS All rights reserved 1-8 031 IXYS reserves the right to change limits, test conditions and dimensions. MUBW 10-12A6 Output Inverter T1 - T6, D1 - D6 Symbol VCES VCGR VGE IC ICM tSC Ptot TVJ TVJ Symbol Conditions TVJ = 25C TVJ = 25C; RGE = 20kW TVJ = 25C TC = 25C TC = 90C tp = 1 ms = 1% duty cycle; TC = 25C TC = 90C Maximum Ratings 1200 1200 20 13 8 26 16 10 67 +150 +150 V V V A A A A s W C C VCE = 600 V; TVJ = 25C; TVJ = 125C non-repetitive TC = 25C Free-Wheeling Diode IGBT Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1 0.1 4.5 1200 2.8 4 200 55 3.3 4.5 5.5 100 100 6.5 A nA V V V V ns ns ns ns mJ mJ pF pF pF S nC 3 V V ns C 250 A C/W C/W ICES IGES VGE(th) V(BR)CES VCEsat tf tr td(on) td(off) Eoff Eon Ciss Coss Crss gfs Qg VF trr Qr Ir RthJC VGE = 0 V; VCE = 1000 V VCE = 0 V; VGE = 25 V VGE = VCE; IC = 0.3 mA VGE = 0 V; IC = 10 mA; TVJ = -40C VGE = 15 V; IC = 5 A; TVJ = 25C TVJ = 150C Inductive load, TVJ = 125C VCC = 600 V; IC = 5 A RG = 100 W; VGE = 15 V 65 320 0.4 0.8 650 50 20 1.7 2.5 48 2.3 2 55 0.8 VGE = 0 V VCE = 25 V f = 1 MHz VCE = 20 V; IC = 1.5 A VCC = 800 V; IC = 6 A pulse; VGE = 15 V IF = 4 A; VGE = 0 V; TVJ = 25C TVJ = 100C IF = 4 A; VGE = 0 V; TVJ = 100C VR = -300 V; diF/dt = -800 A/s IF = 4 A; VR = -300 V; VGE = 0 V diF/dt = -800 A/s IGBT Diode (per die) (per die) 1.55 2.25 (c) 2000 IXYS All rights reserved 2-8 MUBW 10-12A6 Brake Chopper T7, D7 Symbol VCES VCGR VGE IC ICM tSC Ptot TVJ TVJ Symbol Conditions TVJ = 25C TVJ = 25C; RGE = 20kW TVJ = 25C TC = 25C TC = 90C tp = 1 ms = 1% duty cycle; VCE = 600 V; TVJ = 125C non-repetitive TC = 25C Free-Wheeling Diode IGBT TC = 25C TC = 110C Maximum Ratings 1200 1200 20 3.6 2.4 7.2 4.8 10 45 +150 +150 V V V A A A A s W C C Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1 0.1 4.5 1200 2.8 4 100 85 3.3 4.5 5.5 25 100 6.5 A nA V V V V ns ns ns ns mJ mJ pF pF pF S nC 3 V V ns C 250 A C/W C/W ICES IGES VGE(th) V(BR)CES VCEsat tf tr td(on) td(off) Eoff Eon Ciss Coss Crss gfs Qg VF trr Qr Ir RthJC VGE = 0 V; VCE = 1000 V VCE = 0 V; VGE = 25 V VGE = VCE; IC = 0.1 mA VGE = 0 V; IC = 10 mA; TVJ = -40C VGE = 15 V; IC = 1.5 A; TVJ = 25C TVJ = 150C Inductive load, TVJ = 125C VCC = 600 V; IC = 1.5 A RG = 100 W; VGE = 15 V 80 290 0.12 0.34 225 25 13 0.6 24.1 2.3 2 55 0.8 VGE = 0 V VCE = 25 V f = 1 MHz VCE = 20 V; IC = 1.5 A VCC = 800 V; IC = 1 A pulse; VGE = 15 V IF = 4 A; VGE = 0 V; TVJ = 25C TVJ = 100C IF = 4 A; VGE = 0 V; TVJ = 100C VR = -300 V; diF/dt = -800 A/s IF = 4 A; VR = -300 V; VGE = 0 V diF/dt = -800 A/s IGBT Diode (per die) (per die) 2.3 2.25 (c) 2000 IXYS All rights reserved 3-8 MUBW 10-12A6 Module Symbol Tstg VISOL Md dS dA Weight IISOL 1 mA; 50/60 Hz; t = 1 min Mounting torque (M4) Creepage distance on surface Strike distance in air typ. Conditions Maximum Ratings -40...+125 2500 2.0 - 2.2 18 - 20 12.7 12.7 42 C V~ Nm lb.in. mm mm g Temperature Sensor R Symbol R Conditions Tamb = 20C Maximum Ratings 4.7 kW For additional data see C620/4.7k 5% S+M NTC thermistor catalog Dimensions in mm (1 mm = 0.0394") 5.7 0.3 21.1 0.5 17.1 0.3 3.4 0.1 57.3-0.3 2 +0. 5.5 4.3+ 0.2 (c) 2000 IXYS All rights reserved 4-8 MUBW 10-12A6 Input Rectifier Bridge D8 - D13 50 A 40 IF 30 300 1000 800 A2s typ. lim. A 250 IFSM 200 VR = 0 V 50Hz, 80%VRRM TVJ = 45C TVJ = 180C It 2 600 400 TVJ= 180C TVJ= 25C 20 150 100 10 TVJ=45C 200 50 TVJ=180C 0 V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF 0 10-3 100 10-2 10-1 100 s t 101 1 2 3 4 5 6 7 ms10 89 t Forward characteristics Surge overload current IFSM: crest value, t: duration I2t versus time (1-10 ms) 10 (ZthJH is measured using 50 m thermal grease) 1 D =0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 ZthJH[K/W] 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 0.001 100 t (s) Transient thermal resistance junction to heatsink (c) 2000 IXYS All rights reserved 5-8 MUBW 10-12A6 Output Inverter T1 - T6 UAApuhhprvvpA!$8 N L M K VtW hA$W iA%W J pA&W qA'W rA(W ,F$ H sA W I tA W uA !W vA "W wA #W xA $W G 8FH9 DEF Reverse biased safe operating area 2.5 10 Short circuit safe operating area 2.0 ICpuls / IC 1.5 8 ICsc / IC 6 di/dt = 200 A/s 600 A/s 1000A/s 1.0 4 TVJ = 150C 2 V = 15 V GE Tsc 10 s L < 50 nH 0 400 800 VCE 1200 V 0.5 TVJ = 150C VGE = 15 V 0.0 0 400 800 VCE 1200 V 0 (c) 2000 IXYS All rights reserved 6-8 MUBW 10-12A6 Output Inverter T1 - T6 7\SVZLWFKLQJ WLPHV UAvpuvtAvrA V Q W WGRI I V Q W WGRII IC =5A VCE = 600 V TVJ = 125C WI RI I WGRQ WURQ RG = 250 W VCE = 600 V TVJ = 125C WIRII WGRQ WURQ 5J2KP ,$ 7\S VZLWFKLQJ ORVVHV ( RQ& ( RI I & ( RI I & UAvpuvtAyr IC = 5A VCE = 600 V (RII& (RII& (RQ& (RQ& RG = 250 W VCE = 600 V P K 2 J 5 ( RQ& V : P ( (P: V ,$ Transient thermal resistance junction to heatsink 10 (ZthJH is measured using 50 m thermal grease) 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 IGBT ZthJH [K/W] 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 0.001 100 t (s) (c) 2000 IXYS All rights reserved 7-8 MUBW 10-12A6 Output Inverter D1 - D6 30 A 25 IF 20 TVJ=150C 2000 nC 1500 Qr TVJ= 100C VR = 600V 40 TVJ= 100C A VR = 600V IF= 20A IF= 10A IF= 5A IRM 30 15 TVJ=100C 1000 20 IF= 20A IF= 10A IF= 5A 10 TVJ= 25C 500 10 5 0 0 1 2 3 VF 4V 0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt Forward current IF versus VF Reverse recovery charge Q versus -diF/dt 150 ns 140 TVJ= 100C VR = 600V Peak reverse current IRM versus -diF/dt 120 V VFR tfr TVJ= 100C IF = 10A VFR 2.0 1.2 ms tfr 0.8 1.5 Kf 1.0 trr 130 120 110 IF= 20A IF= 10A IF= 5A 80 IRM 40 0.4 0.5 Qr 100 90 0 0 200 400 600 -diF/dt 800 A/ms 1000 0 8-12 0.0 0 40 80 120 C 160 TVJ 200 400 0.0 600 A/ms 1000 800 diF/dt Dynamic parameters Qr, IRM versus TVJ Recovery time trr versus -diF/dt Peak forward voltage VFR and tfr versus diF/dt 10 (ZthJH is measured using 50 m thermal grease) 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 FRED ZthJH[K/W] 0.01 0.00001 0.0001 0.001 0.01 t (s) 0.1 1 10 0.001 100 Transient thermal resistance junction to heatsink (c) 2000 IXYS All rights reserved 8-8 |
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